IGBT module structural analysis, process, and device characteristics analysis report
Analysis of the Fuji Electric IGBT module for EV and HEV (6MBI800XV-075V-01)!
We provide the "Structural Analysis, Process, and Device Characteristics Analysis Report for Fuji Electric's EV and HEV IGBT Module (6MBI800XV-075V-01)." The Ice-Vce characteristics of the RC-IGBT, off-state collector leakage current, and breakdown voltage are measured, and the activation energy is calculated from the temperature dependence of the off-leak current. A comparison is made with Infineon's IGBT7. [Analysis Points] - The module analysis report confirms the internal structure of the module and clarifies the arrangement and layout of the RC-IGBT. - The chip structure analysis report reveals the planar layout and cross-sectional structure of the IGBT and FWD regions of the RC-IGBT. - The process analysis report discusses the process technology of the RC-IGBT, estimates the number of masks, and outlines the manufacturing process flow, among other details. *For more information, please download the PDF or feel free to contact us.*
- Company：エルテック
- Price：Other
